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| AOB434 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB434L is a Green Product ordering option. AOB434 and AOB434L are electrically identical. TO-263 D2-PAK Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9.5 m (VGS = 10V) RDS(ON) < 15 m (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 20 55 55 100 30 135 50 25 3 2.1 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 11 42 2.4 Max 17 50 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOB434 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 100 7.3 10 12 52 0.74 1 55 1230 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 315 190 1.2 25.6 VGS=10V, VDS=12.5V, ID=30A 12.7 5 7.4 6.5 VGS=10V, VDS=12.5V, RL=0.39, RGEN=3 IF=30A, dI/dt=100A/s 34 18 21 28 14 34 2 30 1476 9.5 12 15 1.8 Min 25 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID (A) ID(A) VGS=4V 40 20 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 16 Normalized On-Resistance 14 RDS(ON) (m) 12 10 8 6 4 2 0 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 10 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=4.5V 1.6 VGS=10V, 30A 1.8 3.5V 10 3V 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 30 125C 25C 10V 6V 7V 40 5V 4.5V 60 50 VDS=5V 1.4 1.2 VGS=4.5V, 20A 1 30 ID=30A 25 20 15 10 5 0 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=30A Capacitance (pF) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Crss Coss Ciss 8 VGS (Volts) 6 4 2 1000.0 RDS(ON) limited 100.0 ID (Amps) 1ms 10.0 10ms 1.0 DC TJ(Max)=175C, TA=25C 10s Power (W) 100s 200 160 120 80 40 0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) TJ(Max)=175C TA=25C 0.1 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 60 Power Dissipation (W) tA = L ID BV - VDD 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 Power (W) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TA=25C 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) T 0.01 Alpha & Omega Semiconductor, Ltd. |
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